M29W800DT

M29W800DT M29W800DB 8-Mbit (1 Mbit x 8 or 512 Kbits x 16, boot block) 3 V supply flash memory Features „ Supply voltage – VCC = 2.7 V to 3.6 V for program, erase and read „ Access times: 45, 70, 90 ns „ Programming time – 10 μs per byte/word typical „ 19 memory blocks – 1 boot block (top or bottom location) – 2 parameter and 16 main blocks „ Program/erase c...