isc Silicon
PNP Power
Transistor
DESCRIPTION ·Low VCE(sat) ·Small and slim package ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Power dissipation
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-40
V
VCEO
Collector-Emitter Voltage
-30
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-2
A
PC
Collector Power Dissipation
1.
2
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃
3CA753
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isc Silicon
PNP Power
Transistor
ELECTRICAL CHARACTERIS...