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2SD469

Silicon NPN Power Transistor

Description

isc Silicon NPN Darlingtion Power Transistor DESCRIPTION · Low Collector-Emitter Breakdown Voltage V(BR)CEO= 110V (Min) ·Collector Power Dissipation ·Pc=100W@TC=25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in converters, inverters, switching regulators, motor control systems etc. ABS...

Inchange Semiconductor

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