isc Silicon
NPN Power
Transistors
DESCRIPTION ·Low Collector Saturation Voltage
: VCE(sat)= 1.
0V(Max)@ IC=2A ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 50V (Min) ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for power switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
70
V
VCEO
Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
4
A
ICM
Collector Current-Peak
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
8
A
40
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SD476N
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