isc Silicon
PNP Darlington Power
Transistor
BD684
DESCRIPTION ·Collector–Emitter Breakdown Voltage—
: V(BR)CEO = -120V ·DC Current Gain—
: hFE = 750(Min) @ IC= -1.
5 A ·Complement to Type BD683 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for audio and video output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-120
V
VCEO
Collector-Emitter Voltage
-120
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-4
A
ICM
Collector Current-Peak
-6
A
IB
Base Current
PC
Collector Power Dissipation TC=25℃
Ti
Junction Temperature
Tstg
Storage...