isc Silicon
NPN Power
Transistor
BD791
DESCRIPTION ·High Collector–Emitter Sustaining Voltage — VCEO(sus) = 100 Vdc (Min) • High DC Current Gain @ IC = 200 mAdc hFE = 40–250 • Low Collector–Emitter Saturation Voltage — VCE(sat) = 0.
5 Vdc (Max) @ IC = 500 mAdc ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for low power audio amplifier and low current,
high-speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
4
A
ICM
Collector Current-Peak
...