isc Silicon
NPN Power
Transistor
DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 350V(Min) ·High Current Capability ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.
5 V(Max)@ IC = 10A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for linear amplifiers, series pass
regulators, and
inductive switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
450
V
VCEO
Collector-Emitter Voltage
350
V
VEBO
Emitter-Base Voltage
9
V
IC
Collector Current-Continuous
10
A
PC
Collector Power Dissipation@TC=25℃ 125
W
TJ...