isc Silicon
PNP Power
Transistor
DESCRIPTION ·High breakdown voltage and large current capacity ·Fast switching speed ·Small and slim package permitting ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation ·Complementary to 2SC4135
APPLICATIONS ·Power supplies, relay drivers,lamp drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-120
V
VCEO
Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-2
A
ICM
Collector Current-Peak
Collector Power Dissipation
PC
@ TC=25℃ Collector Power Dissipation
@Ta=25℃
TJ
Junction Temperat...