isc Silicon
PNP Power
Transistor
DESCRIPTION ·Fast Switching Speed ·Low Saturation Voltage-
: VCE(sat)= -0.
3V(Max)@IC= -6A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·This type of power
transistor is developed for high-speed
switching and features a very low VCE(sat), is ideal for use in switching power supplies,DC/DC converters,motor drivers, solenoid drivers, and other low-voltage power supply devices, as well as for high current switching.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-150
V
VCEO
Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage...