INCHANGE Semiconductor
isc Silicon
NPN Power
Transistor
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·Wide Area of Safe Operation ·Built-in Damper Diode
APPLICATIONS ·Horizontal deflection output for TV, CRT monitor
applicaitions.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
Collector-Emitter Voltage
600 V
VEBO
Emitter-Base Voltage
6V
IC Collector Current- Continuous 8 A
IB Base Current- Continuous
4A
ICP Collector Current-Pulse
PC
Collector Power Dissipation @ TC=25℃
TJ Junction Temperature
16 A 35 W 150 ℃
Tstg Storage Temperature Range
-55~150 ℃
isc Product Specification
3DD5024
isc website：www...