Part Number
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PTAC210802FC |
Manufacturer
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Infineon |
Description
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Thermally-Enhanced High Power RF LDMOS FET |
Published
|
Nov 27, 2016 |
Detailed Description
|
PTAC210802FC
Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 – 2170 MHz
Description
The PTAC210802FC is an...
|
Datasheet
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PTAC210802FC
|
Overview
PTAC210802FC
Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 – 2170 MHz
Description
The PTAC210802FC is an 80-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2110 to 2170 MHz frequency band.
Features include dual-path design, input matching, high gain and thermallyenhanced package with earless flange.
Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
PTAC210802FC Package H-37248-4
Gain (dB) Drain Efficiency (%)
Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 100 mA, VGS1 = 1.
3 V, ƒ = 2170 MHz, 3GPP WCDMA signal, PAR = 8 dB, 1...
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