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PTAC260302FC

Part Number PTAC260302FC
Manufacturer Infineon
Description Thermally-Enhanced High Power RF LDMOS FET
Published Nov 27, 2016
Detailed Description PTAC260302FC Thermally-Enhanced High Power RF LDMOS FET 30 W, 28 V, 2620 – 2690 MHz Description The PTAC260302FC is a ...
Datasheet PTAC260302FC




Overview
PTAC260302FC Thermally-Enhanced High Power RF LDMOS FET 30 W, 28 V, 2620 – 2690 MHz Description The PTAC260302FC is a 30-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2620 to 2690 MHz frequency band.
This device integrates a 10-W (main) and a 20-W (peak) transistor, making it ideal for asymmetric Doherty amplifier designs.
Features include input matching, high gain and thermally-enhanced package with earless flange.
Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
ACP Up and ACP Low (dBc) Drain Efficiency(%) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 85 m...






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