Part Number
|
PTAC240502FC |
Manufacturer
|
Infineon |
Description
|
Thermally-Enhanced High Power RF LDMOS FET |
Published
|
Nov 27, 2016 |
Detailed Description
|
PTAC240502FC
Thermally-Enhanced High Power RF LDMOS FET 50 W, 28 V, 2300 – 2400 MHz
Description
The PTAC240502FC is a ...
|
Datasheet
|
PTAC240502FC
|
Overview
PTAC240502FC
Thermally-Enhanced High Power RF LDMOS FET 50 W, 28 V, 2300 – 2400 MHz
Description
The PTAC240502FC is a 47-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2300 to 2400 MHz frequency band.
Features include dual-path design, input matching, high gain and thermally-enhanced package with earless flanges.
Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
Gain (dB) Drain Efficiency (%)
Two-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 120 mA, VGS1 = 2.
6 V, VGS2 = 1.
3 V, ƒ = 2400 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier sp...
Similar Datasheet