DatasheetsPDF.com

PTAC240502FC

Part Number PTAC240502FC
Manufacturer Infineon
Description Thermally-Enhanced High Power RF LDMOS FET
Published Nov 27, 2016
Detailed Description PTAC240502FC Thermally-Enhanced High Power RF LDMOS FET 50 W, 28 V, 2300 – 2400 MHz Description The PTAC240502FC is a ...
Datasheet PTAC240502FC




Overview
PTAC240502FC Thermally-Enhanced High Power RF LDMOS FET 50 W, 28 V, 2300 – 2400 MHz Description The PTAC240502FC is a 47-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2300 to 2400 MHz frequency band.
Features include dual-path design, input matching, high gain and thermally-enhanced package with earless flanges.
Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
Gain (dB) Drain Efficiency (%) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 120 mA, VGS1 = 2.
6 V, VGS2 = 1.
3 V, ƒ = 2400 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier sp...






Similar Datasheet






Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)