PTFB211803EL PTFB211803FL Thermally-Enhanced High Power RF LDMOS FETs 180 W, 2110 – 2170 MHz Description The PTFB211803EL and PTFB211803FL are 180-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 2110 to 2170 MHz frequency band.
Features include input and output matching, high gain and thermally-enhanced packages with slotted or earless flanges.
Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.
PTFB211803EL H-33288-6 PTFB211803FL H-34288-4/2 IMD (dBc) / ACPR (dBc) Efficiency (%) Two-carrier WCDMA 3GPP Drive-up VDD = 30 V, IDQ = 1.
30 A, ƒ = 2170 MHz, 3GPP WCDMA,...

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