Part Number
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PTFC262808SV |
Manufacturer
|
Infineon |
Description
|
Thermally-Enhanced High Power RF LDMOS FET |
Published
|
Nov 27, 2016 |
Detailed Description
|
PTFC262808SV
Thermally-Enhanced High Power RF LDMOS FET 280 W, 28 V, 2620 – 2690 MHz
Description
The PTFC262808SV is a...
|
Datasheet
|
PTFC262808SV
|
Overview
PTFC262808SV
Thermally-Enhanced High Power RF LDMOS FET 280 W, 28 V, 2620 – 2690 MHz
Description
The PTFC262808SV is a 280-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2620 to 2690 MHz frequency band.
Features include input and output matching, high gain and thermally-enhanced package.
Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
PTFC262808SV Package H-37275G-6/2 with formed leads
Gain (dB) Drain Efficiency (%)
Two-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 1800 mA, ƒ = 2690 MHz, 3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.
84 MHz BW
19 40
18 Gai...
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