PTFC262157FH
Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2620 – 2690 MHz
Description
The PTFC262157FH LDMOS FET is designed for use in Doherty cellular power applications in the 2620 MHz to 2690 MHz frequency band.
Input and output matching have been optimized for maximum performance as the peak side
transistor in a Doherty amplifier.
Other features include a thermally-enhanced package with earless flange.
Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
PTFC262157FH Package H-34288G-4/2
Gain (dB) Drain Efficiency (%)
Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 1200 mA, ƒ = 2620 MHz,
3GPP WCDMA...