PTVA093002TC Thermally-Enhanced High Power RF LDMOS FET 300 W, 50 V, 703 – 960 MHz Description The PTVA093002TC is a 300-watt LDMOS FET.
Designed for use in multi-standard cellular power amplifier applications, it can be used as single-ended or in a Doherty configuration.
It features dual-path design, input matching, and a thermally-enhanced surface-mount package.
Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
PTVA093002TC Package H-49248H-4, formed leads Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier 3GPP WCDMA VDD = 50 V, IDQ = 400 mA, ƒ = 758 MHz 3.
84 MHz bandwidth, 10 dB PAR 24 20 Gain 16 ...

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