Part Number
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PTVA101K02EV |
Manufacturer
|
Infineon |
Description
|
Thermally-Enhanced High Power RF LDMOS FET |
Published
|
Nov 27, 2016 |
Detailed Description
|
PTVA101K02EV
Thermally-Enhanced High Power RF LDMOS FET 1000 W, 50 V, 1030 / 1090 MHz
Description
The PTVA101K02EV LDM...
|
Datasheet
|
PTVA101K02EV
|
Overview
PTVA101K02EV
Thermally-Enhanced High Power RF LDMOS FET 1000 W, 50 V, 1030 / 1090 MHz
Description
The PTVA101K02EV LDMOS FET is designed for use in power amplifier applications in the 1030 MHz / 1090 MHz frequency band.
Features include high gain and thermally-enhanced package with bolt-down flange.
Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
PTVA101K02EV Package H-36275-4
Gain (dB) Drain Efficiency (%)
Power Sweep, Pulsed RF VDD = 50 V, IDQ = 150 mA, TCASE = 25°C
ƒ = 1030 MHz
26
128µs, 10%
22 128µs, 1%
MODE-S
18
60 50 40
14
Gain
10
30 20
6 10
Efficiency
2
a101k02ev_1-1
0
30 35 40 45 50 55 60 ...
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