Part Number
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PXFC193808SV |
Manufacturer
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Infineon |
Description
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Thermally-Enhanced High Power RF LDMOS FET |
Published
|
Nov 27, 2016 |
Detailed Description
|
PXFC193808SV
Thermally-Enhanced High Power RF LDMOS FET 380 W, 28 V, 1805 – 1880 MHz
Description
The PXFC193808SV is a...
|
Datasheet
|
PXFC193808SV
|
Overview
PXFC193808SV
Thermally-Enhanced High Power RF LDMOS FET 380 W, 28 V, 1805 – 1880 MHz
Description
The PXFC193808SV is a 380-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band.
Features include input and output matching, high gain and a thermally-enhanced package with earless flange.
Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
PXFC193808SV Package H-37275G-6/2
Peak/Average (dB), Gain (dB) Efficiency (%)
Single-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 2850 mA, ƒ = 1880 MHz 3GPP WCDMA signal,
10 dB PAR, 3.
84 MHz bandwidth
24
60
2...
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