Part Number
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PXFC211507SC |
Manufacturer
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Infineon |
Description
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Thermally-Enhanced High Power RF LDMOS FET |
Published
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Nov 27, 2016 |
Detailed Description
|
PXFC211507SC
Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2110 – 2170 MHz
Description
The PXFC211507SC is a...
|
Datasheet
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PXFC211507SC
|
Overview
PXFC211507SC
Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2110 – 2170 MHz
Description
The PXFC211507SC is a 150-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110 to 2170 MHz frequency band.
Features include input and output matching, high gain and a thermally-enhanced package with earless flanges.
Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
PXFC211507SC Package H-37248G-4/2 (formed leads)
Gain (dB) Drain Efficiency (%)
Two-carrier WCDMA Drive-up
VDD = 28 V, VGS = 2.
6 V, IDQ = 960 mA, ƒ = 2115 MHz, 3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spac...
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