CHZ015A-QEG
15W L-Band Driver
GaN HEMT on Sic in SMD leadless package
Description
The CHZ015A-QEG is an input matched packaged Gallium Nitride High Electron Mobility
Transistor.
It allows broadband solutions for a variety of RF power applications in L-band.
The circuit is well suited for pulsed radar application.
The CHZ015A-QEG is proposed on a 0.
5µm gate length GaN HEMT process.
It is based on Quasi MMIC technology.
It is supplied in RoHS compliant SMD package.
Main Features
■ Wide band capability: 1.
2 - 1.
4GHz ■ Pulsed operating mode ■ High power: 15W ■ High PAE: up to 55% ■ DC bias: VDS=45V @ I D_Q=100mA ■ Low cost package: 24L-QFN4x5 ■ MTTF 106 hours @ Tj=200°C
VDS = 45V, ID_Q = ...