isc Silicon
NPN Power
Transistor
BD635
DESCRIPTION ·DC Current Gain -
: hFE = 40(Min.
)@ IC= 25mA ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min.
) ·Complement to Type BD636 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
2
A
ICM
Collector Current-Peak
5
A
IB
Base Current-Continuous
Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃
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