Silicon N-Channel Power MOSFET
CS3710 B8
○R
General Description:
CS3710 B8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and
VDSS ID PD(TC=25℃) RDS(ON)Typ
100 57 200 14
enhance the avalanche energy.
The
transistor can be used in
various power switching circuit for system miniaturization and
higher efficiency.
The package form is TO-220AB, which
accords with the RoHS standard.
Features:
l Fast Switching l Low ON Resistance(Rdson≤14 mΩ) l Low Gate Charge (Typical Data:72nC) l Low Reverse transfer capacitances(Typical:32pF) l 100% Single Pulse avalanche energy Test
Applications...