Silicon N-Channel Power MOSFET
CS220N04 A8H
○R
General Description:
CS220N04 A8H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve
VDSS ID PD(TC=25℃) RDS(ON)Typ
40 220 333 3.
2
switching performance and enhance the avalanche energy.
The
transistor can be used in various power switching circuit
for system miniaturization and higher efficiency.
The
package form is TO-220AB, which accords with the RoHS
standard.
Features:
l Trench FET Power MOSFET l Low ON Resistance(Rdson≤4mΩ) l Low Gate Charge (Typical Data:138nC) l Low Reverse transfer capacitances(Typical:800pF) l 100% Single Pulse avalanche energy ...