Silicon N-Channel Power MOSFET
CS730F A9RD
○R
General Description:
CS730F A9RD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance
VDSS ID PD(TC=25℃) RDS(ON)Typ
400 6 30
0.
75
and enhance the avalanche energy.
The
transistor can be used in
various power switching circuit for system miniaturization and
higher efficiency.
The package form is TO-220AB, which accords
with the RoHS standard.
Features:
l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:14.
5nC) l Low Reverse transfer capacitances(Typical:7.
5pF) l 100% Single Pulse avalanche energy Test
Applications...