Silicon N-Channel Power MOSFET
CS8N90 A8
○R
General Description:
CS8N90 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve
VDSS ID PD (TC=25℃) RDS(ON)Typ
900 8
130 1.
2
switching performance and enhance the avalanche energy.
The
transistor can be used in various power switching circuit for
system miniaturization and higher efficiency.
The package form is
TO-220AB, which accords with the RoHS standard.
Features:
l Fast Switching l Low ON Resistance(Rdson≤1.
5Ω) l Low Gate Charge (Typical Data:49nC) l Low Reverse transfer capacitances(Typical:12pF) l 100% Single Pulse avalanche energy Test
Applications...