Silicon N-Channel Power MOSFET
CS1N80 A3H
○R
General Description:
CS1N80 A3H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching
VDSS ID PD (TC=25℃) RDS(ON)Typ
800 1 30 12
performance and enhance the avalanche energy.
The
transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency.
The package form is TO-251,
which accords with the RoHS standard.
Features:
l Fast Switching l Low ON Resistance(Rdson≤15Ω) l Low Gate Charge (Typical Data:6.
7nC) l Low Reverse transfer capacitances(Typical:2.
6pF) l 100% Single Pulse avalanche energy Test
Applications:...