Silicon N-Channel Power MOSFET
CS5N70F A9
○R
General Description：
CS5N70F A9,the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance
VDSS ID PD(TC=25℃) RDS(ON)Typ
700 5 32 1.
8
the avalanche energy.
The
transistor can be used in various
power switching circuit for system miniaturization and
higher efficiency.
The package form is TO-220F, which accords
withthe RoHS standard.
Features：
l Fast Switching l Low ON Resistance(Rdson≤2.
2Ω) l Low Gate Charge (Typical Data:18.
6nC) l Low Reverse transfer capacitances(Typical:6.
6pF) l 100% Single Pulse avalanche energy Test
Applications...