Silicon N-Channel Power MOSFET
CS4N60 A4TDY
○R
General Description：
CS4N60 A4TDY, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
The
transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
The package form is TO-252, which accords with the RoHS standard.
Features：
l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 13nC) l Low Reverse transfer capacitances(Typical: 2.
2pF) l 100% Single Pulse avalanche energy Test
VDSS ID PD(TC=25℃) RDS(ON)Typ
600 V 4A 75 W 2.
0 Ω
Applicati...