Silicon N-Channel Power MOSFET
CS2N60F A9H
○R
General Description：
VDSS
600 V
CS2N60F A9H, the silicon N-channel Enhanced ID
2A
VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 24 W
which reduce the conduction loss, improve switching
RDS(ON)Typ
3.
6 Ω
performance and enhance the avalanche energy.
The
transistor can
be used in various power switching circuit for system
miniaturization and higher efficiency.
The package form is
TO-220F, which accords with the RoHS standard.
.
Features：
l Fast Switching l Low ON Resistance(Rdson≤4.
5Ω) l Low Gate Charge (Typical Data:8.
5nC) l Low Reverse transfer capacitances(Typical:5.
4pF) l 100% Single Pulse avalanche energy...