Silicon N-Channel Power MOSFET
CS1N60 A3H
○R
General Description：
VDSS
600 V
CS1N60 A3H, the silicon N-channel Enhanced ID
0.
8 A
VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 25 W
which reduce the conduction loss, improve switching
RDS(ON)Typ
11 Ω
performance and enhance the avalanche energy.
The
transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency.
The package form is TO-251,
which accords with the RoHS standard.
Features：
l Fast Switching l Low ON Resistance(Rdson≤15Ω) l Low Gate Charge (Typical Data:4nC) l Low Reverse transfer capacitances(Typical:2.
6pF) l 100% Single Pulse avalanche energy Tes...