Silicon N-Channel Power MOSFET
CS1N60 A1H
○R
General Description：
CS1N60 A1H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching
VDSS ID PD (TC=25℃) RDS(ON)Typ
600 0.
8 3 11
performance and enhance the avalanche energy.
The
transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency.
The package form is TO-92,
which accords with the RoHS standard.
Features：
l Fast Switching l Low ON Resistance(Rdson≤15Ω) l Low Gate Charge (Typical Data:4nC) l Low Reverse transfer capacitances(Typical:2.
6pF) l 100% Single Pulse avalanche energy Test
Applications：
P...