Silicon N-Channel Power MOSFET
CS13N50F A9H
○R
General Description：
CS13N50F A9H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve
VDSS ID PD (TC=25℃) RDS(ON)Typ
500 13 60 0.
34
switching performance and enhance the avalanche energy.
The
transistor can be used in various power switching circuit for system
miniaturization and higher efficiency.
The package form is
TO-220F, which accords with the RoHS standard.
Features：
l Fast Switching l Low ON Resistance(Rdson≤0.
45Ω) l Low Gate Charge (Typical Data:45nC) l Low Reverse transfer capacitances(Typical:23pF) l 100% Single Pulse avalanche energy Test
Appli...