Silicon N-Channel Power MOSFET
CS13N50 A8H
○R
General Description：
VDSS
500 V
CS13N50 A8H, the silicon N-channel Enhanced
ID
13 A
VDMOSFETs, is obtained by the self-aligned planar Technology
PD (TC=25℃)
150
W
RDS(ON)Typ
0.
34 Ω
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy.
The
transistor can
be used in various power switching circuit for system
miniaturization and higher efficiency.
The package form is
TO-220AB, which accords with the RoHS standard.
Features：
l Fast Switching l Low ON Resistance(Rdson≤0.
45Ω) l Low Gate Charge (Typical Data:45nC) l Low Reverse transfer capacitances(Typical:23pF) l 100% Single Pulse avalanch...