Silicon N-Channel Power MOSFET
CS730 A3RD
○R
General Description：
CS730 A3RD, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching performance
and enhance the avalanche energy.
The
transistor can be used in
various power switching circuit for system miniaturization and
higher efficiency.
The package form is TO-251, which accords with
the RoHS standard.
Features：
l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:14.
5nC) l Low Reverse transfer capacitances(Typical:7.
5pF) l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of electron ballast and...