Silicon N-Channel Power MOSFET
CS630 A8H
○R
General Description:
CS630 A8H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching
VDSS ID PD(TC=25℃) RDS(ON)Typ
200 9 83
0.
23
performance and enhance the avalanche energy.
The
transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency.
The package form is
TO-220AB, which accords with the RoHS standard.
Features:
l Fast Switching l Low ON Resistance(Rdson≤0.
28Ω) l Low Gate Charge (Typical Data:13nC) l Low Reverse transfer capacitances(Typical:10pF) l 100% Single Pulse avalanche energy Test
Applications...