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Part Number
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BT25T120ANF |
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Manufacturer
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Huajing Microelectronics |
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Description
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Silicon FS Planar IGBT |
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Published
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Dec 6, 2016 |
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Detailed Description
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Silicon FS Planar IGBT
BT25T120ANF
○R
General Description：
Using HUAJING's proprietary trench design and advanced FS(f...
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|
Datasheet
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BT25T120ANF
|
Overview
Silicon FS Planar IGBT
BT25T120ANF
○R
General Description：
Using HUAJING's proprietary trench design and advanced FS(field stop) technology, the 1200V Trench FS-IGBT offers superior conduction and switching performances, high avalanche ruggedness.
VCES IC Ptot （TC=25℃）
VCE(SAT)
1200 25 312 1.
9
V A W V
Features：
l Trench FS Technology, Positive temperature coefficient l Low saturation voltage: VCE(sat), typ = 1.
9V
@ IC = 25A and TC = 25°C l Extremely enhanced avalanche capability
Applications：
Power switch circuit of induction cooker(IH).
Absolute Maximum Ratings
（Tc= 25℃ unless otherwise specified）：
Symbol
Parameter
VCES
Collector-Emitter Voltage
VGES
Gate- Emitter Voltage
IC...
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