BSC500N20NS3G
MOSFET
OptiMOSTM3Power-
Transistor,200V
Features
•N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Halogen-freeaccordingtoIEC61249-2-21 •Idealforhigh-frequencyswitchingandsynchronousrectification
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
200
V
RDS(on),max
50
mΩ
ID
24
A
PG-TDSON-8
8 7 6 5
5 6 7 8
Pin 1
2 3
4
4 3
2 1
Drain Pin 5-8
Gate
*1
Pin 4
Source *1: Internal body diode Pin 1-3
Type/OrderingCode BSC500N20NS3 G
Package PG-TDSON-8
Marking 500N20NS
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