OptiMOS™-T Power-
Transistor
Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested
IPD5N25S3-430
Product Summary V DS R DS(on),max ID
250 V 430 mW
5A
PG-TO252-3-313
Type IPD5N25S3-430
Package PG-TO252-3-
Marking 3N25430
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
Pulsed drain current1) Avalanche energy, single pulse1) Avalanche current, single pulse Reverse diode dv /dt Gate source voltage Power dissipation
ID
I D,pulse E AS I AS dv /dt V GS P tot
T C=25°C, V GS=10V T C=100°C, V GS=10V1) T C=25°...