MOSFET
MetalOxideSemiconductorFieldEffect
Transistor
OptiMOSTM
OptiMOSTMFDPower-
Transistor,200V IPB117N20NFD
DataSheet
Rev.
2.
0 Final
PowerManagement&Multimarket
1Description
Features
•N-channel,normallevel •FastDiode(FD)withreducedQrr •Optimizedforhardcommutationruggedness •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Halogen-freeaccordingtoIEC61249-2-21
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS 200 V
RDS(on),max
11.
7
mΩ
ID 84 A
OptiMOSTMFDPower-
Transistor,200V IPB117N20NFD
D²PAK
Gate Pin 1
Drain Pin 2, ta...