isc Silicon
NPN Power
Transistor
NJW0281G
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO=250V(Min) ·Good Linearity of hFE ·Complement to Type NJW0302G ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high fidelity audio amplifier and
other linear applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
250
V
VCEO
Collector-Emitter Voltage
250
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
15
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
1.
5
A
150
W
150
℃
Tstg
Storage T...