50N06B

50N06 : 50N06(F,B,H) 50A mps,60 Volts N-CHANNEL MOSFET FEATURE  50A,60V,RDS(ON)=16mΩ@VGS=10V/25A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability TO-220AB 50N06 ITO-220AB 50N06F TO-263 50N06B TO-262 50N06H Absolute Maximum Ratings(TC=25℃,unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(Note1) Single Pulse Avalanche Energy (Note 2) Avalanche Current(Note1) Repetitive Avalanche Energy (Note1) Reverse Diode dV/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8"from case for 5 seconds VDSS VGSS ID IDM E.

50N06 : 50N06 * '6 72 Available RoHS* COMPLIANT ' * 6 VDS ID VGS PD TJ Tstg EAS 52.4 Ciss Coss Crss VDS=2v, V GS=0V,f=1.0MHZ VDS=2v,V GS=0V,f=1.0MHZ VDS=2v,V GS=0V,f=1.0MHZ (TC=25ºC) BVDSS IDSS IGSS(F/R) RDS(ON) VGS(th) gFS VGS=0V, ID=250uA VDS=60v,VGS=0V VGS=±20V,VDS=0V VGS=10V,ID=26.2A VGS=5V,ID=26.2A VDS=VGS,ID=250µA ID=26.2A,VDS=25V 60 --- -- 2.0 -- ---- 0.017 0.020 20 -- 1 ±100 0.021 0.025 4.0 -- V µA nA Ω V S Qg Qgs Qgd VDS=48V ID=52.4A VGS=5V ---- 24.5 6 14.5 32 --- nC nC nC () Td(on) Tr Td(off) tf VDD=30V IDS=26.2A RG=25Ω ----- 20 380 80 145 50 770 170 300 ns ns ns ns VGS Top : 10.0 V 102 8.0 V 6.0 V 5.0 V 4.5 V 4.

50N06 : ·Drain Current ID= 50A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Fast Switching Speed ·APPLICATIONS ·General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 60 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 50 A Ptot Total Dissipation@TC=25℃ 150 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-a Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 0.96 ℃/W 62.5 ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdfFacto.

50N06 : The UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt. It is mainly suitable electronic ballast, and low power switching mode power appliances.  FEATURES * RDS(ON) ≤ 23mΩ @ VGS=10V, ID=25A * Fast switching capability * 100% avalanche energy specified * Improved dv/dt capability  SYMBOL 2.Drain 1 1 1 TO-220 TO-220F 1 TO-220F1 TO-220F3 1 TO-263 1.Gate 3.Source  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 50N06L-TA3-T 50N06G-TA3-T TO-220 50N06L-TF1-T 50N06G-TF1-T TO-220F1 50N06L-TF3-T 50N06.

50N06 : The KIA50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt. It is mainly suitable electronic ballast, and low power switching 2. Features RDS(ON)=23mΩ@VGS=10V. Ultra low gate charge (typical 30nC) Low reverse transfer capacitance Fast switching capability 100％ avalanche energy specified Improved dv/dt capability 3. Pin configuration Pin 1 2 3 Function Gate Drain Source 1 of 9 Free Datasheet http://www.datasheet4u.com/ KIA 50 Amps, 60 Volts N-CHANNEL MOSFET 50N06 SEMICONDUCTORS 6. Absolute maximum ratings Parameter Drain to source .

50N06 : Shenzhen Tuofeng Semiconductor Technology Co., Ltd 50N06 Power-Transistor Features • For fast switching converters and sync. rectification • N-channel enhancement - normal level • 175 °C operating temperature • Avalanche rated • Pb-free lead plating, RoHS compliant Product Summary V DS R DS(on),max SMDversion ID 60 V 15 mΩ 50 A Type 50N06 50N06 2 Package Marking 1 3 TO-251 50N06 1 23 TO-252 50N06 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D TC =25 °C1) Pulsed drain current I D,pulse T C=25 °C2) Avalanche energy, single pulse E AS I D=50 A, R GS=25 Ω Reverse diode dv /dt dv /dt I D=50 A, V DS=48 V, di .

50N06-F : The UTC 50N06-F is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt. It is mainly suitable electronic ballast, and low power switching mode power appliances.  FEATURES * RDS(ON) ≤ 23 mΩ @ VGS=10V, ID=25A * Fast switching capability * 100% avalanche energy specified * Improved dv/dt capability 1 TO-220 1 TO-251 1 TO-263 1 TO-252  SYMBOL 2.Drain 1.Gate 3.Source  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 50N06L-TA3-T 50N06G-TA3-T 50N06L-TM3-T 50N06G-TM3-T 50N06L-TN3-R 50N06G-TN3-R 50N06L-TQ2-T 50N06G-TQ2-T 50N06L.

50N06F : 50N06(F,B,H) 50A mps,60 Volts N-CHANNEL MOSFET FEATURE  50A,60V,RDS(ON)=16mΩ@VGS=10V/25A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability TO-220AB 50N06 ITO-220AB 50N06F TO-263 50N06B TO-262 50N06H Absolute Maximum Ratings(TC=25℃,unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(Note1) Single Pulse Avalanche Energy (Note 2) Avalanche Current(Note1) Repetitive Avalanche Energy (Note1) Reverse Diode dV/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8"from case for 5 seconds VDSS VGSS ID IDM E.

50N06FI : ·Drain Current ID=27A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 28mΩ(Max) ·Fast Switching Speed ·Low Drive Requirement ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High current , high speed switching ·Switch mode power supplies ·DC-DC converters for telecom, industrial,and lighting equipment ideal for monitor’s B+ function ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 60 V VGS Gate-Source Voltage ±20 V Drain Current-continuous@ TC=25℃ 27 ID A Drain Current-continuous@ TC=100℃ 19 Ptot Total Dissipation@TC=25℃ 45 W Tj Ma.

50N06H : 50N06(F,B,H) 50A mps,60 Volts N-CHANNEL MOSFET FEATURE  50A,60V,RDS(ON)=16mΩ@VGS=10V/25A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability TO-220AB 50N06 ITO-220AB 50N06F TO-263 50N06B TO-262 50N06H Absolute Maximum Ratings(TC=25℃,unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(Note1) Single Pulse Avalanche Energy (Note 2) Avalanche Current(Note1) Repetitive Avalanche Energy (Note1) Reverse Diode dV/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8"from case for 5 seconds VDSS VGSS ID IDM E.