OptiMOSTM3 Power-
Transistor
Features • Optimized technology for synchronous rectification
• Ideal for high frequency switching and DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • N-channel, normal level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Halogen-free according to IEC61249-2-21
Type
BSC042NE7NS3 G
Product Summary V DS R DS(on),max ID
BSC042NE7NS3 G
75 V 4.
2 mΩ 100 A
Package Marking
PG-TDSON-8 042NE7NS
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D V GS=10 V, T C=25 °C V GS=10 V, T C=...