Part Number
|
CJD05N60B |
Manufacturer
|
ZPSEMI |
Description
|
N-Channel Power MOSFET |
Published
|
Dec 19, 2016 |
Detailed Description
|
CJD05N60B
TO-251S Plastic-Encapsulate MOSFETS
CJD05N60B N-Channel Power MOSFET
GENERAL DESCRIPTION This advanced high v...
|
Datasheet
|
CJD05N60B
|
Overview
CJD05N60B
TO-251S Plastic-Encapsulate MOSFETS
CJD05N60B N-Channel Power MOSFET
GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently.
This new high energy device also offers a drain-to-source diode fast recovery time.
Desighed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits.
FEATURE z High Current Rating z Lower RDS(on) z Lower Capacitance z Lower Total Gate Charge z Tighter VSD Specifications z Avalanche Energy Specified
TO-251S
1.
GATE 2.
DRAIN 3.
SOURCE
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter Drain-Source Volta...
Similar Datasheet