Part Number
|
HFI7N80 |
Manufacturer
|
SemiHow |
Description
|
800V N-Channel MOSFET |
Published
|
Dec 22, 2016 |
Detailed Description
|
HFW7N80_HFI7N80
Dec 2015
HFW7N80 / HFI7N80
800V N-Channel MOSFET
BVDSS = 800 V RDS(on) typ ȍ ID = 7.0 A
FEATU...
|
Datasheet
|
HFI7N80
|
Overview
HFW7N80_HFI7N80
Dec 2015
HFW7N80 / HFI7N80
800V N-Channel MOSFET
BVDSS = 800 V RDS(on) typ ȍ ID = 7.
0 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 35 nC (Typ.
) Extended Safe Operating Area Lower RDS(ON) ȍ7\S#9GS=10V 100% Avalanche Tested
D2-PAK I2-PAK
HFW7N80
HFI7N80
1.
Gate 2.
Drain 3.
Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25ଇ)
...
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