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Part Number
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RG2006LN |
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Manufacturer
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Sanyo |
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Description
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Low VF / High-Speed Switching Diode |
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Published
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Dec 23, 2016 |
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Detailed Description
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Ordering number : ENA1434
RG2006LN
SANYO Semiconductors
DATA SHEET
RG2006LN
Diffused Junction Silicon Diode
Low VF •...
|
|
Datasheet
|
RG2006LN
|
Overview
Ordering number : ENA1434
RG2006LN
SANYO Semiconductors
DATA SHEET
RG2006LN
Diffused Junction Silicon Diode
Low VF • High-Speed Switching Diode
Features
• High breakdown voltage (VRRM=600V).
• High reliability.
• One-point fixing type plastic mold package facilitating easy mounting and heat dissipation.
• Fast reverse recovery time.
• Low noise at the time of reverse recovery.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Peak Output Current Surge Forward Current Junction Temperature Storage Temperature
Symbol VRRM VRSM IO IOP IFSM Tj Tstg
Electrical Characteristics at Ta=25°...
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