2SD2385
TOSHIBA
Transistor Silicon
NPN Triple Diffused Type (Darlington power
transistor)
2SD2385
Power Amplifier Applications
Unit: mm
· High breakdown voltage: VCEO = 140 V (min) · Complementary to 2SB1556
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range
Symbol
VCBO VCEO VEBO
IC IB
PC
Tj Tstg
Rating 140 140 5 8 0.
1
120
150 −55 to 150
Equivalent Circuit
Unit V V V A A
W
°C °C
COLLECTOR
BASE
JEDEC
―
JEITA
―
TOSHIBA
2-21F1A
Weight: 9.
75 g (typ.
)
≈ 100 Ω
EMITTER
1 2003-02-04
2SD2385
Electric...