MOSFET CJA03N10-HF N-Channel RoHS Device Halogen Free Features -Special process technology for high ESD capability.
-High density cell design for extremely low RDS(ON).
-Good stability and uniformity with high EAS.
-Excellent package for good heat dissipation.
1 : Gate 2 : Drain 3 : Source SOT-89-3L 0.
181(4.
60) 0.
173(4.
40) 0.
061(1.
55) REF.
0.
102(2.
60) 0.
091(2.
30) 123 0.
167(4.
25) 0.
155(3.
94) Circuit Diagram D G S 0.
020(0.
52) 0.
013(0.
32) 0.
060(1.
50) TYP.
0.
023(0.
58) 0.
016(0.
40) 0.
118(3.
00) TYP.
0.
063(1.
60) 0.
055(1.
40) 0.
047(1.
20) 0.
035(0.
90) 0.
017(0.
44) 0.
014(0.
35) Dimensions in inches and (millimeter) Maximum Ratings (at Ta=25°C unless otherwise noted) Parameter Symbol Dr...

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