|
Part Number
|
CJL6601 |
|
Manufacturer
|
JCET |
|
Description
|
P- & N-Channel MOSFET |
|
Published
|
Dec 26, 2016 |
|
Detailed Description
|
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23-6L Plastic-Encapsulate MOSFETS
CJL6601 P-channel and N-channe...
|
|
Datasheet
|
CJL6601
|
Overview
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD
SOT-23-6L Plastic-Encapsulate MOSFETS
CJL6601 P-channel and N-channel Complementary MOSFETS
GENERAL DESCRIPTION The CJL6601 uses advanced trench technology to provide excellent RDS(on)
and low gate charge.
The complementary MOSFETS form a high-speed power inverter and suitable for a multitude of applications.
SOT-23-6L
Maximum Ratings (TA=25℃ unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain-Source Voltage
N-channel VDS 30
P-channel -30
V
Gate-Source Voltage Continuous Drain Current(1) Pulsed Drain Current (2)
VGS ±12 ID 3.
4 IDM 30
±12 -2.
3 -30
V A A
Power Dissipation
PD 0.
35
0.
35 W
Thermal Resistance from Junctio...
Similar Datasheet