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Part Number
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CJP08N60 |
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Manufacturer
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JCET |
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Description
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N-Channel MOSFET |
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Published
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Dec 26, 2016 |
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Detailed Description
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220-3L Plastic-Encapsulate MOSFETS
CJP08N60
V(BR)DSS
600V
N-Chan...
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Datasheet
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CJP08N60
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Overview
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD
TO-220-3L Plastic-Encapsulate MOSFETS
CJP08N60
V(BR)DSS
600V
N-Channel Power MOSFET
RDS(on)MAX
1.
3Ω@10V
ID
8A
TO-220-3L
GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently.
This new high energy device also offers a drain-to-source diode fast recovery time.
Desighed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits.
FEATURE z High Current Rating z Lower RDS(on) z Lower Capacitance z Lower Total Gate Charge z Tighter VSD Specifications z Avalanche Energy Specified
1.
GATE 2.
DR...
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